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Anvar Tukhtaev 1 Article
557 Improvement of Device Characteristics of Low Temperature IGZO Thin-film Transistors through Laser Post Annealing
레이저 후열처리 공정을 통한 저온공정형 IGZO 박막 트랜지스터의 특성 개선에 관한 연구
Jae-Yun Lee, Anvar Tukhtaev, Suchang Yoo, Yong-Hwan Kim, Seong-Gon Choi, Heung Gyoon Ryu, Yong Jin Jeong, Sung-Jin Kim
이재윤, Anvar Tukhtaev, 유수창, 김용환, 최성곤, 유흥균, 정용진, 김성진
Korean J. Met. Mater. 2022;60(8):557-563.   Published online 2022 Jul 12
DOI: https://doi.org/10.3365/KJMM.2022.60.8.557

Abstract
High-performance thin-film transistors (TFTs) produced at low temperatures are required for ultrahigh- resolution and flexible display applications. The scientific community has been studying unconventional techniques to investigate low voltage flexible devices and low power flexible circuits for the past decade. In particular, metal oxide semiconductors, such as indium gallium zinc..... More

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